3DG6型NPN型硅高频小功率三极管参数
表1.1.14:
原类型 | 3DG6 | 测验条件 | ||||||
新类型 | 3DG100A | 3DG100B | 3DG100C | 3DG100D | ||||
极限参数 | PCM(mW) | 100 | 100 | 100 | 100 | |||
ICM(mA) | 20 | 20 | 20 | 20 | ||||
BVCBO(V) | ≥30 | ≥40 | ≥30 | ≥40 | Ic=100μA | |||
BVCEO(V) | ≥20 | ≥30 | ≥20 | ≥30 | Ic=100μA | |||
BVEBO(V) | ≥4 | ≥4 | ≥4 | ≥4 | IE=100μA | |||
直流参数 |
ICBO(μA) | ≤0.01 | ≤0.01 | ≤0.01 | ≤0.01 | VEB=10V | ||
ICEO(μA) | ≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | VCE=10V | |||
IEBO(μA) | ≤0.01 | ≤0.01 | ≤0.01 | ≤0.01 | VEB=1.5V | |||
VBES(V) | ≤1 | ≤1 | ≤1 | ≤1 | Ic=10mA IB=1mA | |||
VCES(V) | ≤1 | ≤1 | ≤1 | ≤1 | Ic=10mA IB=1mA | |||
hFE | ≥30 | ≥30 | ≥30 | ≥30 | VCE=10V Ic=3mA | |||
沟通 参数 |
fT(MHz) | ≥150 | ≥150 | ≥300 | ≥300 | VCE=10V IE=3mA f=100MHz RL=5Ω |
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Kp(dB) | ≥7 | ≥7 | ≥7 | ≥7 | VCE=-6V IE=3mA f=100MHz | |||
Cob(pF) | ≤4 | ≤4 | ≤4 | ≤4 | VCE=10V IE=0 | |||
hFE色标分档 (红)30~60; (绿)50~110; (蓝)90~160; (白)>150